28Rev. 4, 1/2014
RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
Information in this document is provided solely to enable
system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular
purpose, nor does Freescale assume any
liability arising
out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E
2005--2006, 2008--2009, 2014 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: MRF6S20010N
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6S21050LSR5
MOSFET RF N-CH 28V 11.5W NI-400S
MRF6S21060NR1
MOSFET RF N-CH 28V 14W TO270-4
MRF6S21100HSR5
MOSFET RF N-CHAN 28V 23W NI-780S
MRF6S21100NR1
MOSFET RF N-CH 28V 23W TO270-4
MRF6S21140HSR5
MOSFET RF N-CHAN 28V 30W NI-880S
MRF6S21190HSR5
MOSFET RF N-CH 54W NI880S
MRF6S23100HSR5
MOSFET RF N-CHAN 28V 20W NI-780S
MRF6S23140HSR5
MOSFET RF N-CHAN 28W 28W NI-880S
相关代理商/技术参数
MRF6S20010GNR1-CUT TAPE
制造商:Freescale 功能描述:MRF6S20010 Series 1.6 to 2.2 GHz 28 V 10 W RF Power N-Ch Mosfet - TO-270
MRF6S20010NR1
功能描述:射频MOSFET电源晶体管 HV6 2GHZ 10W TO270-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S20010NR1_09
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR3
功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21050LR3_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21050LR5
功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6S21050LS
制造商:Freescale Semiconductor 功能描述:
MRF6S21050LSR3
功能描述:射频MOSFET电源晶体管 HV6 W-CDMA 11.5W NI400LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray